TXRF METROLOGY TOOLS
Wafer Surface Contamination Metrology
TXRF 3760COMPACT TXRF SPECTROMETER
Wafer Surface Contamination Metrology
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TXRF310FabTXRF SPECTROMETER FOR HVM
For The Highest Throughput Wafer Surface Contamination Metrology |
TXRF-V310INTEGRATED VPD-TXRF SPECTROMETER
For The Highest Sensitivity Wafer Surface Contamination Metrology |
TXRF spectrometers are widely used to measure contamination in the semiconductor fabrication process. TXRF technique allows non-destructive analysis for most all elements (Na~U) in the periodic table. TXRF spectroscopy is possible due to the property of X-rays as they irradiate the surface of a wafer. Each material has a unique critical angle. If the incident angle of the X-rays is above the acute angle, the X-rays penetrate the surface deeply; if the incident angle is smaller than the critical angle, total reflection occurs. In the total reflection condition, fluorescence X-rays will occur only from contamination on the surface, and the substrate material will not add background noise to the measurement. The penetration depth of the incident X-rays under the conditions of total reflection is theoretically around 5 nm, and thus TXRF is classified as a surface analysis technique.
APPLICATION SAMPLE
Evaluation of spatial distribution of contamination on wafer surfaces by TXRF
TXRF ROTATING ANODE
- Higher count rates
- Higher sensitivity
- Faster count times
- Enables W-M excitation of light elements
TXRF MEASUARABLE ELEMENTS
Learn more about txrf technique
TXRF TOTAL REFLECTION X-ray Fluorescence
Who we are
Rigaku Semiconductor Metrology Division
Semiconductors have the power to change the world for the better. Here at Rigaku, we strive to make this a reality as the leading global supplier of X-ray metrology tools for semiconductor process R&D and high-volume manufacturing.
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