Wafer Surface Contamination Metrology With Light Elements Sensitivity

• Ease of operation and rapid analysis results
• Compact design, footprint <1 m2
• High-power rotating-anode source (9 kW)
• Liquid nitrogen-free detector (SDD)
• Three-beam excitation  (W-M, W-Lb, H.E.)
• Wide range of analytical elements (Na~U)
• Light-element sensitivity (Na, Mg, Al)
• Application to bare Si, SiC, and non-Si substrate
  
  

Simultaneous WDXRF spectrometer for film thickness and composition measurements on wafers

1. Patented "diffraction avoidance" capability for accurate XRF results
2. High-sensitivity Boron analysis (with AD-Boron channel)
3. Solid-state, oil-free x-ray generator
4. SMIF and through-the-wall configurations are available to meet         the various needs of high-volume manufacturing wafer fabs
5. Capable of high analytical performance, accuracy, and stability
6. Simultaneous evaluation of film thickness and composition
7. Applicable to all film types
   
   

Automated Multipurpose X-Ray Diffractometer

• Available in-plane arm (5-axis goniometer)
• High-flux X-ray source: PhotonMax
• HyPix-3000 high energy resolution 2D HPAD detector
• New CBO family, with fully automated beam switchable CBO-Auto
• New CBO family, with high-resolution micro area CBO-μ
• Operando measurements with SmartLab Studio II software
• Multi-year component warranty contributes to the low cost of ownership
• Multiple sample stages to suit applications: Heating stages, 4-inch full map stage, 6-inch full map stage, and 2D reflection stage for GI SAXS/WAXS

X-Ray Topography Imaging System 

• High-brilliance dual-wavelength X-ray source: Micromax-007 DW
• High-resolution CCD camera: XTOP (5.4 μm pixels)
• Ultra-high resolution CCD camera: HR-XTOP (2.4 μm pixels)
• Horizontal sample mount for the minimum artificial strain to wafers
• Automatic wafer curvature correction for best dislocation image quality
• Automated system operation, including X-ray anode switch, detector switch, optics switch and sample alignment, and image collection
• Automated dislocation analysis 3, 4, 6, 8, 12-inch wafers supported
• Wafer loader compatible

X-RAY DIFFRACTION ANALYSIS

NON-DESTRUCTIVE XRD SYSTEM MAPPING TOOL FOR NEAR-FAB APPLICATIONS

• Highest precision goniometer with selectable optics for all thin film XRD applications and XY-movable stage for mapping
• Efficient Measurement Speed
• Incident Monochromator for high-resolution measurements
• Large Wafer full-Mapping
• For up to 300 mm wafers

Blanket Epitaxial Thin Film 
Si/SiGe Multilayer 

• Non-destructive wafer analysis for multi-layered materials
• Epitaxial and polycrystalline films
• Measurements; thickness, composition, strain, relaxation, and structural quality
• 9 kW Rotating Anode or 2.2 kW Sealed XG Selectable
• X-ray Optics Line Focus With Mirror and/or 2/4 Bounce Crystal
• For Blanket wafers
•  Cleanroom, in-line, fully automated GEM300 platform 
•  SEMI S2/S8 Compliant

Rigaku Corporation

Rigaku Americas Corp.

Rigaku Europe SE