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APPLICATIONS: MEMORY

MEMORY_RSMDSemiconductorIcons_20_072222

Memory application metrology solutions address process requirements for film thickness and composition as well as surface contamination monitoring and process requirements for film thickness and composition.

PRAM (GST)

Rigaku metrology solutions address process requirements for film thickness and composition. Here we describe different analytical approaches to characterize PRAM (GST) materials by WD-XRF versus XRR and ED-XRF.

 

MRAM

Rigaku MRAM metrology solutions address process requirements for film thickness and composition as well as surface contamination monitoring.

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X-RAY METROLOGY SOLUTIONS

AZX 400

Sequential WD-XRF spectrometer for wafers, media disks, and large samples

XTRAIA® MF-3000 (MFM310)

ED-XRF and XRR for blanket and patterned metal layer thickness and composition

WD-XRF | features of Rigaku AZX 400

Rigaku metrology solutions address process requirements for film thickness and composition. Here we describe different analytical approaches to characterize PRAM (GST) materials by WD-XRF versus XRR & ED-XRF.

General features of Rigaku WDXRF systems, like the AZX 400, are shown below.

System Images

 

WDXRF System Images

Measurable Elements 

  • Be - U
  • Measure ultra-light elements such as B, C, N, and O.   
  • Measure Mg and Al with high resolution.

Quantitative Method

Advanced FP Method FP (Fundamental Parameter) method enables thickness and composition analysis with one recipe.

 

Analyzable Structure

  • Analyze up to 20 stacked layers.
  • The FP method considers the absorption by other layers.
  • Analysis of complex compounds or multi-layered samples.

 

Analyzable Thickness

  • Sub-angstrom (Å) to micron (μm) level
  • High-power X-ray tubes (4 kW) can excite multiple lines for most elements.
  • Our systems address a wide range of thicknesses.

 

ED-XRF and xrr | features of Rigaku XTRAIA® MF-3000

Rigaku's XTRAIA MF-3000 (MFM310) employs three COLORSTM monochromatic beam modules for ED-XRF measurements of light, transition, and heavy elements.  ED-XRF measurements can be made over a range of incidence angles, and the ability to perform grazing incidence XRF measurements enhances sensitivity for ultra-thin films.

 

image-png-Jun-28-2021-04-31-17-33-PM

 

 

MRAM Process Measurement

The table below describes thickness and composition measurement possibilities.

Analysis Condition:

  • CoFeB thickness can be measured by XRF in the case of constant composition.
  • CoFeB composition measurement by Co and Fe. B could not be measured.
  • Compositions were calculated by the Fundamental Parameters (FP) Method.

MRAM

MTJ

Film

Thickness (nm)

MFM

ED-XRF

MFM

XRR

WaferX

WD-XRF

CoFE in CoFeB

50 ~ 100

o    

o    

o    

B in CoFeB

50 ~ 100

x    

x    

o    

MgO

~ 5

x    

∆    

o    

ELECTRODE

Ta

5 ~ 50

o    

o    

o    

Ru

5 ~ 50

o    

o    

o    

PtMn

50 ~ 100

o    

o    

o    

 

 

MRAM MEASUREMENT TOOLS

Rigaku MRAM metrology solutions address film thickness and composition process requirements and surface contamination monitoring.

MFM 310

MFM 310 | Wafer mapping with small edge exclusion. Thickness, roughness, and layer density.

Image - WaferX 310 - 2018-11-21

WafeX 310 | MTJ layer thickness and composition

TXRF 310Fab

TXRF310Fab | Contamination on the backside of silicon substrates

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